Impact ionization and real-space transfer of minority carriers incharge injection transistors |
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| Authors: | Tedesco C. Mastrapasqua M. Canali C. Luryi S. Manfredi M. Zanoni E. Sivco D.L. Cho A.Y. |
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| Affiliation: | Dipartimento di Elettronica e Inf., Padova Univ. ; |
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| Abstract: | High electric fields in the channel of InGaAs-InAlAs heterostructure complementary charge injection transistor give rise to impact ionization and real-space transfer of minority holes from the channel. These phenomena are investigated by measuring light emission in the 1.1-3.1 eV energy range for different points on the electrical characteristics. The effective carrier temperature, determined from the exponential tails of electroluminescence spectra, is 2100 K in the channel and 450 K in the barrier |
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