InAs／GaAs亚单层结构的静压光谱研究

在１５Ｋ下测量了ＩｎＡｓ／ＧａＡｓ亚单层结构的静压光致发光，静压范围为０～８ＧＰａ．常压下ＩｎＡｓ层中重空穴激子的发光峰随ＩｎＡｓ层厚的减小向高能移动，同时峰宽变窄，强度减小．其压力行为与ＧａＡｓ基体的基本一致，表明量子阱（线、点）模型仍适用于ＩｎＡｓ／ＧａＡｓ亚单层结构．得到平均厚度为１／３单分子层的样品中由于附加的横向限制效应引起的电子和空穴束缚能的增加分别为２３和４２ｍｅＶ

PHOTOLUMINESCENCE OF InAs/GaAs SUBMONOLAYER STRUCTURE UNDER HYDROSTATIC PRESSURE

The photoluminescence of InAs/GaAs submonolayer structure was measured at 15K under hydrostatic pressure up to 8 GPa. At normal pressure, the peak energies of the heavy hole exciton emission have a blue shift with the decrease of the thickness of the InAs layer, and with a narrowing peak width and weakening peak intensity. The pressure behavior of these peaks is similar to that of the GaAs matrix, indicating that the model of quantum well (quantum wire, quantum dot) structure is still valid for InAs/GaAs submonolayer. The increases of the confined energies for electrons and heavy holes are 23 and 42 meV, respectively, for 1/3 monolayer InAs/GaAs sample due to the additional lateral confinement of carriers.