Tunnelling transport in Al-n-GaSb Schottky diodes |
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| Authors: | Subekti A Tansley TL Goldys EM |
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| Affiliation: | Lab. of Semicond. Sci. & Technol., Macquarie Univ., Sydney, NSW; |
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| Abstract: | Investigations of Al Schottky contacts to n-GaSb are presented. Barrier heights of 0.60±0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K, are explained by electron tunneling. Ideality factors yield donor concentrations significantly greater than nominal, accentuated by annealing, suggesting modification of the reactive GaSb surface |
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