YSZ薄膜Sol-Gel法制备及其结构分析

本文应用Sol－Gel方法制备了YSZ薄膜，研究了工艺条件对薄膜微观结构的影响.实验发现：基片的选择和清洁、样品的凝胶化速度、热处理过程中的升降温速率等是影响薄膜开裂的几个主要因素．XRD和SEM分析结果表明：应用Sol－Gel方法制备的YSZ薄膜，热处理温度须达800℃以上才能完全排除其中的酸根、有机基因和碳元素，且形成完整的立方相结构．薄膜经500℃、1h热处理后，其表面呈明显的海绵状结构．随着烧结温度的升高，薄膜表面变得致密，气孔明显减少，至1050℃时，薄膜表面光滑、无裂纹、无针孔、圆球形的小颗粒均匀分布．薄膜与衬底的结合紧密，薄膜厚度均匀，膜厚约为1.0μm.

Preparation and Structure Characterization of YSZ Film by Sol-Gel Method

The YSZ film was prepared by sol-gel method. The effect of process conditions on the microstructurewas studied. Wc found that the major factors of the effect on the film cracking are the selection and cleaingof substrates, the rate of gelation, the velocity of the temperature rising and cooling in the heat treatmentprocess, XRD and SEM results showed that the YSZ film prepared by sol-gel method must be calcined atabove 8OO°C, to remove the acidic root, organic groups and carbon element, alld t0 form perfectlyl;cubic phase strcture. The film surface densified and pores decreased with the firing temperature increasing. At 1050℃, the film surface became smooth, crackfree and porefree, the spherical grain distributed uniformly. The film and substrate combined tightly, the thickness of the film was about 1.0μm.