| 化学气相沉积法ZnS块材料的生长 |
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| 引用本文： | 憨勇,郑修麟,刘正堂. 化学气相沉积法ZnS块材料的生长[J]. 无机材料学报, 1997, 12(3): 346-350 |
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| 作者姓名： | 憨勇 郑修麟 刘正堂 |
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| 作者单位： | 西安交通大学材料科学与工程学院; 西安710049; 西北工业大学材料科学与工程系, 西安 |
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| 基金项目： | 国防科技预研基金!94J12．1．6HK0341 |
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| 摘 要： | 本文用化学气相沉积法制备了ZnS薄膜和块材料；观察了ZnS在具有不同表面粗糙度的石墨和石英基体上的成核和长大行为；研究了沉积温度、H2S和Zn蒸汽流量对ZnS生长速率的影响规律．
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| 关 键 词： | 化学气相沉积 ZnS 晶体生长 |
| 收稿时间： | 1996-04-01 |
| 修稿时间： | 1996-06-07 |
The Crystal Growth of Chemical Vapor Deposition zinc sulphide Bulk Materials |
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| HAN Yong,ZHENG Xiulin,LIU Zhengtang. The Crystal Growth of Chemical Vapor Deposition zinc sulphide Bulk Materials[J]. Journal of Inorganic Materials, 1997, 12(3): 346-350 |
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| Authors: | HAN Yong ZHENG Xiulin LIU Zhengtang |
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| Affiliation: | School of Materials Science and Engineering; Xi an Jiaotong University Xi an 710049 China; Department of Materials Science and Engineering; Northwestern Polytechnical UniversitgXifan China |
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| Abstract: | The film and bulk material of zinc sulphide were prepared by chemical vapor deposition. The nucleation and the growth of zinc sulphide crystals deposited on the graphite and quartz substrates withdifferent roughness were observed. The grAlNs of zinc sulphide deposited on the substrate surface are veryfine, with equiaoxial shape, and then grow up into columnar shape. The roughness of the substrate surfaceinfluences the nucleation density of zinc sulphide but has no effect on the growth rate of zinc sulphide crystal in the thickness direction. The thickness of zinc sulphide nearly increases with inoresing the depositiontime. The growth rate of zinc sulphide increases with increasing the flow of H2S and vapoured Zn. Thegrowth rate exhibits maxium value at a given deposition temperature. |
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| Keywords: | chemical vapor deposition zinc sulphide crystal growth |
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