高温退火对反应溅射制备的a-SiC:H薄膜结构的影响

通过红外透射谱、拉曼散射谱和X射线衍射谱的测量，研究了反应溅射制备的氢化非晶硅碳膜（SP-a-SiC：H）高温退人处理后的结构变化。发现在等时退火的情况下，退火温度对薄膜结构影响明显，H原子的逸出温度与键合有关，H从CH_n中逸出要比从SiH_n键中追出需要更高的温度，样品经800℃退火后，a－SiC：H膜转化为μc－SiC膜

Effect of High-Temperature Annealing on the Structure of Reactive-Sputtering a-SiC:H Films

Using infrared transimissing, airman scattering, and X-ray diffraction spectroscopy, the authors investigated the effect of annealing temperature on the structure of amorphous hydrogenatedsilicon carbide (a-SiC:H) films prepared by the reactive sputtering method. It is found that annealing at temperature up to 800℃ results in evacuation of hydrogen atoms. Moreover, the annealingtemperature corresponding to the evacuation of H atom from CH_nbonds is higher than thatof R evacuation from SiH_n bonds. The annealing produces structural rearrangements, and the amorphous phase begins to transform into the microcrystalline phase at approximate 800℃.