采用碳纳米管制备的碳化硅纳米晶须研究

本文报道了采用两步生长法生成碳化硅（SiC）纳米晶须.首先通过二氧化硅与硅反应生成一氧化硅，然后生成的SiO与碳纳米管先驱体反应生成立方结构的β-SiC纳米晶须．其直径为3～40nm，长度为2～20μm．通过XRD、HREM、Raman、PL等检测手段，对生成的碳化硅纳米晶须的形貌、结构等进行了分析研究．其直径为3～40nm，长度为2～20μm．并具有峰值位于430nm的蓝光发射带，本文中还对碳化硅纳米晶须生长机制进行了讨论．

Study on the Silicon Carbide Nanorods Produced from Carbon Nanotubes

A two-step reaction was used for the synthesis of SiC nanorods. First, SiO vapour was generated via the silicon reduction of silica. Second, the generated SiO vapour reacted with carbon nanotubes, which resulted in the growth of the single crystalline cubic β-SiC nanorods. The diameters of SiC nanorods ranged from 3～40nm. A broad photoluminescence peak located around 430nm under 260nm UV fluorescent light excitation at room temperature was observed. The morphology and structure of the nanorods were characterized by XRD, HREM and Raman spectroscopy. The growth mechanism of SiC nanorods was studied in detail.