| 高频溅射法氮碳膜的生长及结构 |
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| 引用本文： | 余庆选,方容川.高频溅射法氮碳膜的生长及结构[J].无机材料学报,1997,12(4):541-544. |
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| 作者姓名： | 余庆选 方容川 |
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| 作者单位： | 中国科学技术大学物理系; 合肥230026; 中国科学技术大学结构分析中心 合肥 230026 |
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| 基金项目： | 国家自然科学基金!19504010 |
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| 摘 要： | 本文用扫描电镜、红外吸收光谱、X射线光电子能谱和X射线衍射技术对高频溅射沉积法制备的氮化碳膜的生长过程进行了研究．改变溅射条件，研究了氮化碳膜的形貌和结构与其性质之间的关系，通过溅射条件的优化，可使氮化碳膜中的氮含量增加，薄膜的结构接近β-C3N4相．
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| 关 键 词： | 高频溅射 氮化碳薄膜 生长 结构 |
| 收稿时间： | 1996-7-8 |
| 修稿时间： | 1996-9-16 |
Growth and Structure of CN films by RF-reactive Sputtering |
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| YU Qingxuan,FANG Rongchuan.Growth and Structure of CN films by RF-reactive Sputtering[J].Journal of Inorganic Materials,1997,12(4):541-544. |
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| Authors: | YU Qingxuan FANG Rongchuan |
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| Affiliation: | Department of Physics; University of Science and Technology of China Hefei 200026 China |
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| Abstract: | Carbon nitride thin films were deposited on Si (100) substrates using the RF-reastive sput-tering technigue. These films were characterized by transimssion electron microscopy, infrared spectroscopy, X-ray photoelectron spectra (XPS) and X-ray diffraction (XRS). It was found that the structure and morpho1ogy of the CN films varied with deposition parameters. Under optimum conditions, β-C3N4 phase was synthesized. |
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| Keywords: | RF-reactive sputtering carbon nitride thin films growth structure |
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