| ZrO2掺杂对SnO2薄膜电性及气敏性的影响 |
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| 引用本文： | 方国家,刘祖黎,张杰,姚凯伦.ZrO2掺杂对SnO2薄膜电性及气敏性的影响[J].无机材料学报,1997,12(1):59-64. |
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| 作者姓名： | 方国家 刘祖黎 张杰 姚凯伦 |
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| 作者单位： | 华中理工大学物理系!武汉，430074，华中理工大学物理系!武汉，430074，华中理工大学材料科学系!武汉，430074，中科院国际材料物理中心!沈阳，110015，中国高等科技中心（世界实验室），北京，100080 |
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| 基金项目： | 国家自然科学基金，湖北省教委资助 |
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| 摘 要： | 本研究不用金属醇盐而以无机盐ＳｎＣｌ２．２Ｈ２Ｏ为主体原料，以Ｚｒ（ＯＣ３Ｈ７）４为掺杂剂，无水乙醇为溶剂，采用溶胶－疑胶Ｓｏｌ－Ｇｅｌ）工艺制备了不同ＺｒＯ２掺杂份量的ＳｎＯ２薄膜，发现ＺｒＯ２薄膜在常温下对Ｈ２Ｓ气体具有较好的气敏性能，同时本文研究了ＺｒＯ２掺杂份量对ＳｎＯ２薄膜导电率及气敏性能的影响。
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| 关 键 词： | 掺杂 气敏性 二氧化锡薄膜 陶瓷薄膜 二氧化锆 |
| 收稿时间： | 1995-12-25 |
| 修稿时间： | 1996-2-12 |
Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique |
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| FANG Guojia,LIU Zuli,ZHANG Jie,YAO Kailun.Effect of ZrO2 Dopant on the Electrical and Gas Sensing Properties of SnO2 Thin Films Prepared by the Sol-Gel Technique[J].Journal of Inorganic Materials,1997,12(1):59-64. |
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| Authors: | FANG Guojia LIU Zuli ZHANG Jie YAO Kailun |
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| Affiliation: | DepartmentofPhysics;HuazhongUniv.ofSci.Tech.Wuhan430074China;DepartmentofMaterialsScience;HuazhongUniv.ofSci.Tech.Wuhan130074China;InternationalCenterforMaterialPhysics;AcademicSinicaShenyang110015China;CCAST(WorldLab.),P.O.Box8730Beijing100080China |
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| Abstract: | SnO2(ZrO2) thin films with different dopant concentrations were deposited on soda-glass sheets by the Sol-Gel technique, using non-alkoxide SnCl2.2H2O as main precursor, Zr(OC3H7)4 as dopant, ethanol as solvent. The effect of ZrO2 dopant concentration on the efectrical and gas sensing was studicd. We found that the ZrO2-SnO2 thin films prepared by this method havc very good gas sensitivity, excellent selectivity, rapid rcspionse and recovery behaviour to H2S at room temperature. |
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| Keywords: | ZrO_2 doped SnO_2 thin films Sol-Gel technique ZrO_2 dopant concentration electrical and gas sensing properties |
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