| PCVD法合成的无定形Si3N4纳米粉末和薄膜的红外特性比较 |
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| 引用本文： | 陆忠乾,江东亮,谭寿洪. PCVD法合成的无定形Si3N4纳米粉末和薄膜的红外特性比较[J]. 无机材料学报, 1997, 12(3): 435-439 |
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| 作者姓名： | 陆忠乾 江东亮 谭寿洪 |
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| 作者单位： | 中国科学院上海硅酸盐研究所!上海，200050，中国科学院上海硅酸盐研究所!上海，200050，中国科学院上海硅酸盐研究所!上海，200050 |
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| 摘 要： | 用等离子冷放电化学气相法（ＰＣＶＤ）合成的高纯、超细的无定形Ｓｉ３Ｎ４粉末，领教旷了不同时间和在红外灯下烘烤短时间后，进行红外光谱的测定，发现合成的粉末测量暴露于空气中就产生了氧化，而后随着储放时间的延长，表面氧化愈来愈严重，Ｓｉ－Ｏ键的吸收峰强度明显增强。而Ｓｉ－Ｎ－Ｓｉ键，Ｓｉ－Ｈ键的吸收峰则愈来愈弱，直至仅有极小的吸收，而用低温ＰＣＶＤ法合成的无定形薄膜的特征吸收峰宽且强，与刚合成的粉末的红
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| 关 键 词： | 氧化 红外光谱 氮化硅陶瓷 纳米粉末 PCVD法 |
| 收稿时间： | 1996-05-23 |
| 修稿时间： | 1996-07-01 |
IR Spectrum of the Amorphous Nano Si3N4 Powder and Film Synthesized by PCVD |
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| LU Zhongqian,JIANG Dongliang,TAN Shouhong. IR Spectrum of the Amorphous Nano Si3N4 Powder and Film Synthesized by PCVD[J]. Journal of Inorganic Materials, 1997, 12(3): 435-439 |
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| Authors: | LU Zhongqian JIANG Dongliang TAN Shouhong |
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| Affiliation: | ShanghaiInstituteofCeamics;ChineseAcademyofSciencesShanghai200050China |
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| Abstract: | High pure ultrafinc Si3N4 powders were obtAlNed by Plasma Cold-discharge Chemical VaporDeposition Method. After storage for various time and baking with infrared lamp, IR spectra ofthe powders were measured. IR spectra revealed that oxidation occurred as soon as the powderexposed to the air. With the continuation of the storage, the oxidation on the surface developedand the adsorption peak of Si-O bond obviously increased while the adsorption peaks of So-N-Siand Si-H bonds decreased. The characteristic adsorptions of PCVD synthesized amorphous filmswere wide and strong, similar to those of the fresh synthesized powder. Howers they did not changewith time. |
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| Keywords: | PCVD amorphous silicon nitride powders oxidation IR spectrum |
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