Interfacial capacitance in epitaxial heterostructures La0.67Ca0.33MnO3/SrTiO3/La0.67Ca0.33MnO

Epitaxial trilayer heterostructures of the type La_0.67Ca_0.33MnO₃/SrTiO₃/La_0.67Ca_0.33MnO₃ were grown by laser ablation on (001)[(LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7] substrates. The real part of the dielectric permittivity ε and the loss factor tan δ of a 1100-nm-thick SrTiO₃ interlayer were studied in the temperature interval T=4.2–300 K in a nonbiased state and at a bias voltage of ±2.5 V applied to the manganite electrodes. Using the temperature dependence ε(T) measured for the SrTiO₃ layer grown between the manganite electrodes, we have estimated the capacitance of La_0.67Ca_0.33MnO₃/SrTiO₃ interfaces (C₁≈2 μF/cm²) related to the electric field penetrating from the interlayer into La_0.67Ca_0.33MnO₃.