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RB-SiC亚表面损伤检测及其旋转超声磨削亚表面损伤特征
引用本文:秦娜,郑亮,刘亚龙,孔春雷. RB-SiC亚表面损伤检测及其旋转超声磨削亚表面损伤特征[J]. 光学精密工程, 2017, 25(10): 2714-2724. DOI: 10.3788/OPE.20172510.2714
作者姓名:秦娜  郑亮  刘亚龙  孔春雷
作者单位:西南交通大学 机械工程学院, 四川 成都 610031
基金项目:教育部重点实验室开放式基金资助项目,国家自然科学基金资助项目,中国博士后科学基金资助项目,高等学校博士学科点专项科研基金新教师类课题资助项目,中央高校基本科研业务费专项资金资助项目
摘    要:分别采用截面抛光法(包括以硅片作陪衬与以聚酯作陪衬两种形式)和界面黏接法检测了反应烧结碳化硅(Reaction Bonded SiC,RB-SiC)旋转超声磨削加工的亚表面损伤。为确定其中的最佳检测形式,采用表面破碎层深度、最大破碎层深度、平均裂纹深度、最大裂纹深度4个亚表面损伤评价指标对两种方法分别检测到的RB-SiC旋转超声磨削亚表面损伤进行对比分析。结果显示:截面抛光法(硅片作陪衬)检测到的4个指标值依次为3.30μm、6.59μm、8.64μm、17.44μm;截面抛光法(聚酯作陪衬)检测到的4个指标值依次为5.71μm、14.33μm、15.36μm、54.82μm;而界面黏接法检测到的4个指标值依次为9.19μm、19.45μm、13.04μm、32.20μm。试验结果表明,截面抛光法(硅片作陪衬)检测的精度更高,检测的亚表面损伤更符合实际情况。最后,基于此方法,对旋转超声磨削RB-SiC材料的亚表面损伤特征进行了总结。

关 键 词:旋转超声磨削  反应烧结碳化硅(RB-SiC)材料  亚表面损伤  截面抛光法  界面黏接法
收稿时间:2017-04-28

Subsurface damage detection of RB-SiC and its subsurface damage characteristics in rotating ultrasonic grinding
QIN Na,ZHENG Liang,LIU Ya-long,KONG Chun-lei. Subsurface damage detection of RB-SiC and its subsurface damage characteristics in rotating ultrasonic grinding[J]. Optics and Precision Engineering, 2017, 25(10): 2714-2724. DOI: 10.3788/OPE.20172510.2714
Authors:QIN Na  ZHENG Liang  LIU Ya-long  KONG Chun-lei
Affiliation:Department of Mechanical Engineering, Southwest Jiaotong University, Chengdu 610031, China
Abstract:A cross-sectional polishing method (taking a silicon as foil or taking a polyester as foil ) and a bonded interface sectioning method were used to test the subsurface damage of RB-SiC (reaction bond-ed SiC)in rotary ultrasonic grinding (RUG) respectively .To determine the optimal test form ,four kinds of subsurface damage evaluation indexes ,namely average chipping layer depth ,maximum chip-ping layer depth ,average crack depth and maximum crack depth were used to analyze and compare the subsurface damages of RB-SiC in the RUG tested by the two methods mentioned above .The results show that the evaluation indexes from cross-sectional polishing method (the silicon as foil ) are 3 .30μm ,6 .59 μm ,8 .64 μm ,and 17 .44 μm ,those from the cross-sectional polishing method (the polyes-ter as foil) are 5 .71 μm ,14 .33 μm ,15 .36 μm ,and 54 .82 μm ,and those from the bonded interface sectioning method are 9 .19 μm ,19 .45μm ,13 .04 μm ,and 32 .20μm .It demonstrates that the cross-sectional polishing method (the silicon as foil) has the higher test accuracy ,and the detection result is more in line with the actual situation .Finally ,the paper summarizes subsurface damage characteris-tics of RB-SiC in the RUG .
Keywords:rotary ultrasonic grinding  reaction Bonded SiC (RB-SiC )  subsurface damage  cross-sec-tional polishing  bonded interface sectioning
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