X波段GaAs单片压控振荡器 |
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引用本文: | 梁波 林金庭. X波段GaAs单片压控振荡器[J]. 固体电子学研究与进展, 1991, 11(3): 188-192 |
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作者姓名: | 梁波 林金庭 |
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作者单位: | 南京电子器件研究所 210016(梁波,林金庭,夏先齐,王福臣),南京电子器件研究所 210016(杨玉昌) |
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摘 要: | 本文报告了X波段GaAs单片压控振荡器的设计和制作,电路设计采用小信号CAD分析程序,能准确地预计振荡频率,同时利用特殊工艺途径提高了变容管Q值.单片电路调谐范围是9.3~11.6GHz,输出功率大于10dBm.
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关 键 词: | 压控振荡器 X波段 GaAs 振荡器 |
X Band GaAs Monolithic Voltage Controlled Oscillator |
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Abstract: | This paper describes the design and processing of X-Band GaAs monolithic voltage controlled oscillator. The circuit design employs the microwave linear circuit analysis program to determine the turning frequency range of oscillator. A special processing has been adopted to Improve the Q of a varactor. The 9.3-11.6GHz turning frequency range and more than 10dBm output power are obtained. |
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