The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters |
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Authors: | R. M. Biefeld A. A. Allerman S. R. Kurtz J. H. Burkhart |
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Affiliation: | (1) Sandia National Laboratory, 87185-0601 Albuquerque, NM;(2) Idaho State University, 83201 Pocatello, ID |
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Abstract: | We describe the metalorganic chemical vapor deposition of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500°C, and 200 Torr in a horizontal quartz reactor using TMIn, TESb, AsH3, and PH3. By changing the layer thickness and composition, we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 4.4 µm. Excellent performance was observed for a SLS light emitting diode (LED) and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 µm with a maximum operating temperature of 240K and a characteristic temperature of 33K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 µm with 80 µW of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 µm at 120K. |
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Keywords: | InAsSb metalorganic chemical vapor deposition (MOCVD) midinfrared lasers strained-layer superlattices |
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