Synthesis of Silicon Carbide Nanotubes |
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Authors: | T Taguchi N Igawa H Yamamoto S Jitsukawa |
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Affiliation: | Neutron Science Research Center, Japan Atomic Energy Research Institute, Tokai-mura, Ibaraki-ken 319-1195, Japan; Department of Materials Science, Japan Atomic Energy Research Institute, Tokai-mura, Ibaraki-ken 319-1195, Japan |
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Abstract: | Single-phase silicon carbide (SiC) nanotubes were successfully synthesized by the reaction of carbon nanotubes with silicon powder at 1200°C for 100 h. X-ray diffraction patterns indicated that most of the carbon from the carbon nanotubes that were reacted with silicon at 1200°C for 100 h was transformed to SiC. Transmission electron microscopy observations revealed that both single-phase SiC nanotubes and C–SiC coaxial nanotubes, which are carbon nanotubes sheathed with a SiC layer, were synthesized after 100 h of reaction. The ratio of single-phase SiC nanotubes to C–SiC nanotubes increased with heat treatment at 600°C in air for 1 h because the remaining carbon was removed . |
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