Strength and sharp contact fracture of silicon |
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Authors: | R F Cook |
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Affiliation: | (1) Consultant, Minneapolis 55413, Now at: Ceramics Division, NIST, Gaithersburg, MD 20899, USA |
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Abstract: | The fracture strength of Si is considered in the context of yield and reliability of microelectronic and microelectromechanical
(MEMS) devices. An overview of Si fracture, including the strength of Si wafers, dice and MEMS elements, highlights the importance
of understanding sharp contact flaws, with their attendant residual stress fields, lateral cracks and strength-limiting half-penny
cracks in advanced Si device manufacturing. Techniques using controlled indentation flaws, including measurements of hardness,
crack lengths, crack propagation under applied stress, and inert and reactive strengths, are applied in an extensive new experimental
study of intrinsic, n- and p-type {100} and {110} Si single crystals and polycrystalline Si, addressing many of the issues discussed in the overview.
The new results are directly applicable in interpreting the strengths of ground or diced Si wafer surfaces and provide a foundation
for studying the strengths of MEMS elements, for which the strength-controlling flaws are less well-defined. Although the
indentation fracture behavior of Si is shown to be quite anisotropic, the extensive lateral cracking greatly affects crack
lengths and strengths, obscuring the underlying single crystal fracture anisotropy. No effects of doping on fracture are observed.
Strength decreases in water and air suggest that Si is susceptible to reactive attack by moisture, although the effect is
mild and extremely rapid. Strength increases of indented components after buffered HF etching are shown to be due to reactive
attack of the contact impression, leading to residual stress relief. |
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