| 用于光纤通信的硅光电探测器的研制 |
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| 引用本文： | 徐永泽,陈炳若.用于光纤通信的硅光电探测器的研制[J].光电子技术,2006,26(1):30-33. |
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| 作者姓名： | 徐永泽 陈炳若 |
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| 作者单位： | 武汉大学物理科学与技术学院,武汉,430072;中国科学院传感技术国家重点实验室,上海,200050 |
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| 摘 要： | 根据光纤入户（FTTH）的应用特点,选用外延层厚度和电阻率各不相同的三种硅外延片,研制了用于FTTH的PIN硅光电探测器,并与硅单晶材料的PN结光电二极管进行了全程比对.测量结果表明,PIN探测器的暗电流可达10-11A量级,响应时间为2 ns.分析了Ⅰ层厚度和电阻率对探测器件暗电流、结电容和响应时间的影响及引起特性差别的原因,为设计能满足光纤通信要求的光电探测器提供了依据.
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| 关 键 词： | 光纤通信 硅光电探测器 PIN光电二极管 上升时间 暗电流 |
| 文章编号： | 1005-488X(2006)01-0030-04 |
| 收稿时间： | 2005-08-10 |
| 修稿时间： | 2005年8月10日 |
Silicon Photodetector for Optical Communications |
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| XU Yong-ze,CHEN Bing-ruo.Silicon Photodetector for Optical Communications[J].Optoelectronic Technology,2006,26(1):30-33. |
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| Authors: | XU Yong-ze CHEN Bing-ruo |
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| Affiliation: | 1. School of Physics Science and Technology, Wuhan University, Wuhan , 430072, CHN ; 2. State Key Laboratory of Transducer Technology, Chinese Academy of Science,Shanghai, 200050, CHN |
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| Abstract: | According to the applied characteristics of FTTH,three kinds of silicon epitaxial wafers with different thicknesses and resistivities were chosen to make PIN-photoelectric detectors for FTTH,which were entirely contrasted with PNphotodiode fabricated from a silicon single crystal wafer.The measured values of PIN-photoelectric detectors showed that the order of magnitude of dark current could be 10~(-11) A and response time was 2 ns.The influence caused by thickness and resistivity of intrinsic layer on the detectors' characteristic parameters is analyzed,such as dark current,junction capacitance and response time.These can illumine us to make photoelectric detector for optical fiber communication. |
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| Keywords: | optical fiber communication photoelectric detector PIN-photodiode rise time dark current |
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