| 蓝宝石晶体双面研磨加工的实验研究 |
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| 引用本文： | 文东辉,洪滔,张克华,鲁聪达.蓝宝石晶体双面研磨加工的实验研究[J].光学精密工程,2009,17(10):2493-2498. |
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| 作者姓名： | 文东辉 洪滔 张克华 鲁聪达 |
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| 作者单位： | 浙江工业大学,机械制造及自动化教育部重点实验室,浙江,杭州,310032 |
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| 基金项目： | 国家重大科学研究计划资助项目，国家自然科学基金重点资助项目，浙江省科技计划重点资助项目，清华大学摩擦学国家重点实验室开放基金，浙江工业大学重中之中人才基金 |
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| 摘 要： | 为了实现对蓝宝石晶体的高效低损伤研磨加工，对蓝宝石晶体的双面研磨加工表面粗糙度、研磨均匀性和亚表面损伤层的深度进行试验研究。采用280#碳化硼磨粒双面研磨(0001)面蓝宝石晶体，首先考察了研磨时间对材料去除速率、表面粗糙度的作用规律，根据蓝宝石晶体切割表面状态确定了双面研磨的加工余量，接着，通过WYKO粗糙度仪从微观上分析了蓝宝石晶体表面的研磨均匀性，最后应用纳米压入测试分析了亚表面损伤层的深度。实验结果表明：蓝宝石晶体经过120分钟的双面研磨加工后可以获得Ra0.523μm，Rt<6.0μm的表面，亚表面损伤层小于1μm。
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| 关 键 词： | 蓝宝石 双面研磨 均匀性 亚表层损伤 |
| 收稿时间： | 2008-07-15 |
| 修稿时间： | 2008-12-06 |
Dual-lapping process for sapphire crystal |
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| WEN Dong-hui,HONG Tao,ZHANG Ke-hua,LU Cong-da.Dual-lapping process for sapphire crystal[J].Optics and Precision Engineering,2009,17(10):2493-2498. |
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| Authors: | WEN Dong-hui HONG Tao ZHANG Ke-hua LU Cong-da |
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| Affiliation: | WEN Dong-hui,HONG Tao,ZHANG Ke-hua,LU Cong-da(Key Laboratory of Mechanical Manufacture and Automation,Ministry of Education,Zhejiang University of Technology,Hangzhou,310032,China) |
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| Abstract: | In order to achieve high efficiency and low damaged layers during a sapphire crystal lapping process,an experimental research on the rougness,lapping uniformity and sub-surface damaged layer were studied in this paper.The sapphire with(0001) orientation was lapped by 280 mesh boron carbide abrasive grits.The effects of lapping time on the material removal rates and surface roughness were investigated,and the processing remainders by the dual-lapping were determined in accordance with the surface states of t... |
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| Keywords: | Sapphire dual-lapping uniformity sub-surface damage |
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