High temperature deformation behaviour of MoSi2 and WSi2 single crystals

High temperature deformation behaviour of MoSi₂ and WSi₂ single crystals, which both oriented near 001 and near 100, have been studied by compression tests over the temperature range of 1100 to 1500° C in a high vacuum of less than 6×10^–4 Pa. At elevated temperatures, several per cent compression deformation is possible in both MoSi₂ and WSi₂. Slips on {110 and {013 planes, the dislocation with the direction of Burgers vector 331 and the stacking fault on {110 plane are observed in both deformed MoSi₂ and WSi₂. In MoSi₂, the 0.2% offset stress of the sample oriented <001> is higher than that of the sample oriented <100>. The higher strength of the sample oriented <001> is related to the higher CRSS for the main slip plane of it. The reverse orientation dependence of the strength in WSi₂ is also correlated with the difference in CRSS on {110 and {013 planes, which shows the opposite result to MoSi₂. The higher CRSS on {110 plane in WSi₂ compared to that on {013 may be caused by the formation of a large number of stacking faults on {110 plane.