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10-12MeV电子对MOS样品和硅二、三极管辐射效应的研究
引用本文:赖启基,吴凤美,蒋永兴,陆用义,朱以璋,王元林,冯文荃. 10-12MeV电子对MOS样品和硅二、三极管辐射效应的研究[J]. 核技术, 1986, 0(6)
作者姓名:赖启基  吴凤美  蒋永兴  陆用义  朱以璋  王元林  冯文荃
作者单位:南京大学(赖启基,吴凤美,蒋永兴,陆用义,朱以璋,王元林),南京大学(冯文荃)
摘    要:本文介绍10—12MeV高能电子对MOS样品及已封装硅二、三极管辐射效应的实验研究结果。分析了高能电子辐射效应的特点及其实用意义。

关 键 词:高能电子  电子注量  缺陷能级  复合中心  少子寿命  界面态  界面固定正电荷

Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron
Lai Qiji Wu Fengmei Jiang Yongxing Lu YongyiZhu Yizhang Wang Yuanlin Feng Wenquan. Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron[J]. Nuclear Techniques, 1986, 0(6)
Authors:Lai Qiji Wu Fengmei Jiang Yongxing Lu YongyiZhu Yizhang Wang Yuanlin Feng Wenquan
Affiliation:Nanjing University
Abstract:In this paper, the experimental results of the radiation effects on MOS samples and sealed Si diodes and triodes using 10-12MeV electrons are presented. The features and practical values of radiation effects by high energy electron have been analyzed.
Keywords:high energy electron electron doses defect energy levels recombination centre the lifetime of minority carriers interface states interface fixed positive charges  
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