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| 10-12MeV电子对MOS样品和硅二、三极管辐射效应的研究 | |
| 引用本文： | 赖启基,吴凤美,蒋永兴,陆用义,朱以璋,王元林,冯文荃.10-12MeV电子对MOS样品和硅二、三极管辐射效应的研究[J].核技术,1986(6). |
| 作者姓名： | 赖启基 吴凤美 蒋永兴 陆用义 朱以璋 王元林 冯文荃 |
| 作者单位： | 南京大学 (赖启基，吴凤美，蒋永兴，陆用义，朱以璋，王元林)，南京大学(冯文荃) |
| 摘 要： | 本文介绍10—12MeV高能电子对MOS样品及已封装硅二、三极管辐射效应的实验研究结果。分析了高能电子辐射效应的特点及其实用意义。 |
| 关 键 词： | 高能电子 电子注量 缺陷能级 复合中心 少子寿命 界面态 界面固定正电荷 |
Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron |
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| Lai Qiji Wu Fengmei Jiang Yongxing Lu YongyiZhu Yizhang Wang Yuanlin Feng Wenquan.Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron[J].Nuclear Techniques,1986(6). | |
| Authors: | Lai Qiji Wu Fengmei Jiang Yongxing Lu YongyiZhu Yizhang Wang Yuanlin Feng Wenquan |
| Affiliation: | Nanjing University |
| Abstract: | In this paper, the experimental results of the radiation effects on MOS samples and sealed Si diodes and triodes using 10-12MeV electrons are presented. The features and practical values of radiation effects by high energy electron have been analyzed. |
| Keywords: | high energy electron electron doses defect energy levels recombination centre the lifetime of minority carriers interface states interface fixed positive charges |
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