Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface.