| 新型双区阴极结构体效应二极管 |
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| 引用本文： | 张晓. 新型双区阴极结构体效应二极管[J]. 半导体技术, 2007, 32(3): 220-222 |
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| 作者姓名： | 张晓 |
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| 作者单位： | 南京电子器件研究所,南京210016 |
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| 摘 要： | 常规的GaAs体效应二极管的阴极结构多采用欧姆阴极,在毫米波频段(W 波段),器件的转换效率小于1%.介绍了一种新型的双区阴极结构在W 波段体效应二极管中的实现,并研制出了样品器件.采用此种结构,可以显著提高毫米波器件的输出功率和转换效率.
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| 关 键 词： | 体效应二极管 欧姆阴极 双区阴极 毫米波 |
| 文章编号： | 1003-353X（2007）03-220-03 |
| 修稿时间： | 2006-09-09 |
New Structure of Two-Area Cathodes Gunn Diodes |
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| ZHANG Xiao. New Structure of Two-Area Cathodes Gunn Diodes[J]. Semiconductor Technology, 2007, 32(3): 220-222 |
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| Authors: | ZHANG Xiao |
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| Affiliation: | Nanfing Electronic Device Institute, Nanjing 210016, China |
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| Abstract: | The cathode structure of general Gunn diodes is ohmic contact.The conversion efficiency of the diodes is less than 1% in millimeter-wave band(W-band).A new structure of two area cathodes applied in W-band Gunn diodes was introduced and made.By adopting this structure,the conversion of the efficiency and the output power of the diodes are enhanced observably. |
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| Keywords: | Gunn diodes ohmic cathode two-area cathode millimeter-wave |
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