Preparation of epitaxial and polycrystalline bismuth titanate thin films on single crystal (100) MgO by chemical solution deposition

Epitaxial and polycrystalline Bi₄Ti₃O₁₂ thin films were prepared on single crystal (100) MgO substrates by a chemical solution deposition process using metal naphthenates as starting materials. Pyrolyzed films (at 500°C) were annealed for 30 min in air at 650, 700, 750 and 800°C, respectively. The effects of annealing temperature on the crystallinity, epitaxy and surface morphology of the films were investigated by X-ray diffraction θ-2θ scans, pole-figure analysis, and atomic force microscopy (AFM). Epitaxially grown films annealed at 700 and 750°C, respectively, showed growth of three-dimensional needle-shaped grains. During annealing at 800°C, grain growth of Bi₄Ti₃O₁₂ may be suppressed by the formation of a titanium-rich phase such as Bi₂Ti₂O₇ owing to Bi volatilization, resulting in lower root mean square roughness than that of film annealed at 750°C.