| 计算MOS器件应力的简单方法 |
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| 引用本文： | 黄庆安,童勤义.计算MOS器件应力的简单方法[J].电子与信息学报,1992,14(6):574-578. |
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| 作者姓名： | 黄庆安 童勤义 |
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| 作者单位： | 东南大学微电子中心，东南大学微电子中心 南京 210018，南京 210018 |
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| 摘 要： | 本文根据SiO2薄膜的边缘力集中近似模型,求出了硅MOS器件中的应力场。计算结果与K.Kobayashi(1990)进行的Raman谱测量结果吻合较好。
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| 关 键 词： | MOS器件 机械应力 Raman谱法 |
| 收稿时间： | 1991-10-23 |
| 修稿时间： | 1992-3-3 |
A SIMPLE APPROACH TO THE CALCULATION OF THE MECHANICAL STRESS IN SILICON DEVICES |
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| Huang Qinan,Tong Qinyi.A SIMPLE APPROACH TO THE CALCULATION OF THE MECHANICAL STRESS IN SILICON DEVICES[J].Journal of Electronics & Information Technology,1992,14(6):574-578. |
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| Authors: | Huang Qinan Tong Qinyi |
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| Affiliation: | Microelectronics Center Southeast University Nanjing 210018 |
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| Abstract: | The residual mechanical stress in SiO2 films results in the degradation of mobilities in MOSFETs. Based on the edge force approximation in SiO2 films, the stress field in MOS device is obtained. The results here are in agreement with those measured by the Raman spectrum method. |
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| Keywords: | MOS device Mechanical st ess Raman spectrum method |
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