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Au/Pt/Ti/Ni ohmic contacts to p-ZnTe |
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| Authors: | Mochizuki K Terano A Momose M Taike A Kawata M Gotoh J Nakatsuka S |
| Affiliation: | Central Res. Lab., Hitachi Ltd., Tokyo; |
| Abstract: | Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10-6 Ωcm2 for a p-type doping level of 3×1019 cm-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact |
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