Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2- n -Si heterostructures |
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| Authors: | A G Zhdan N F Kukharskaya V G Naryshkina and G V Chucheva |
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| Affiliation: | (1) Institute of Radio Engineering and Electronics, Russian Academy of Scences, Fryazino, 141190, Russia |
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| Abstract: | Precision measurements of dynamic current-voltage characteristics of an Al-n
+-Si-SiO2-n-Si structure with a thin (<50 ?) oxide make it possible to separate the active (I
a
) and capacitive (I
c
) components from the total current. An algorithm for the analysis of the capacitive component is developed; this algorithm
makes it possible to determine in a single experiment the doping level of n-Si, the oxide capacitance C
i
, and also the density and sign of the charge fixed in the oxide. Dependences of the surface potential in n-Si and the voltage drop across the oxide on the gate potential V
g
in the transverse electric fields |F| ≤ 10 MV/cm were calculated based on the above data without using any adjustable parameters. At maximum values of |F|, the sheet density of electrons (holes) in n-Si does not exceed 1013 cm−2, which is indicative of the degeneracy and size quantization of electron gas. The dependences I
t
(V
g
) and V
i
(V
g
) were used to recover the current-voltage characteristics of the tunneling current I
t
(V
i
) ≡ I
a
(V
i
); these characteristics were measured within more than ten orders of magnitude of their range of variation in the conditions
of both the enhancement of the n-Si surface and the inversion. The observed I
t
(V
i
) characteristics are not quantitatively described in the context of existing concepts of the tunnel effect.
Original Russian Text ? A.G. Zhdan, N.F. Kukharskaya, V.G. Naryshkina, G.V. Chucheva, 2007, published in Fizika i Tekhnika
Poluprovodnikov, 2007, Vol. 41, No. 9, pp. 1135–1142. |
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| Keywords: | |
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