| GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合 |
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| 引用本文： | 余琦,张勇,郑健生,颜炳章. GaP:N,Zn中等电子陷阱与Zn受主之间的辐射复合[J]. 半导体学报, 1989, 10(9): 717-721 |
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| 作者姓名： | 余琦 张勇 郑健生 颜炳章 |
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| 作者单位： | 厦门大学物理系(余琦，张勇，郑健生)，厦门大学物理系(颜炳章) |
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| 摘 要： | 本文在17-100K的温度范围内对GaP:N,Zn样品进行了变温光致发光的研究.在低温下,观察到NN_3-Zn,Zn-LO的发光峰,其中NN_3-Zn是一个双峰结构.研究NN_1-Zn复合发光强度随温度的变化关系,表明了NN_1中心裸电子态的存在.本工作证实了NN_1和NN_3中心的HTL模型.
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| 关 键 词： | GaP：N Zn 光致发光 束缚激子 |
Radiative Recombination between Isoelectronic Trap and Zn Acceptor in GaP:N, Zn |
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| Yu Qi/. Radiative Recombination between Isoelectronic Trap and Zn Acceptor in GaP:N, Zn[J]. Chinese Journal of Semiconductors, 1989, 10(9): 717-721 |
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| Authors: | Yu Qi/ |
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| Affiliation: | Yu Qi/Department of Physics Xiamen UniversityZhang Yong/Department of Physics Xiamen UniversityZheng Jiansheng/Department of Physics Xiamen UniversityYan Bingzhang/Department of Physics Xiamen University |
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| Abstract: | The photoluminescence of Zn~+ implanted GaP:N has been studied at different temperatu-res ranging from 17 to 100K.At low temperatures NN_2-Zn and Zn-LO emission lines wereobserved. NN_2-Zn was a doublet.Analysing the temperature dependence of NN_1-Zn emission,it showed the existence of bare electron bound state for NN_1 center.This work further con-firms the HTL model for NN_1 and NN_2 centers. |
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| Keywords: | GaP:N Zn Photoluminescence Bound exciton |
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