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A new single step process for synthesis and growth of ZnGeP2 crystal |
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| Authors: | TY Wang DK Rai WT Hsu |
| Affiliation: | a Department of Chemical Engineering, National Taiwan University, Roosevelt Road, Taipei 10617, Taiwan b Department of Physics and Materials Science and Engineering, Jaypee Institute of Information Technology University, Noida 201307, India c Photovoltaics Technology Center, Industrial Technology Research Institute, Hsin-Chu, Taiwan |
| Abstract: | A new one-step process for synthesis and growth of zinc-germanium-phosphide, ZnGeP2 (ZGP), is reported for the first time herein using a three-zone resistance furnace by the horizontal gradient freeze technique. A safe and proper temperature scheme has been obtained for both synthesis and growth of ZGP crystals via the melt growth route from Zn, Ge and P powder. The prepared material has been investigated using powder X-ray diffraction which shows the correct ZGP tetragonal phase. EPMA results are also obtained to estimate the compositional homogeneity of the grown crystal. |
| Keywords: | 78 55 Hx 78 30 Am 81 10 &minus h 87 64 Bx 61 10 &minus i |
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