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Design and implementation of cryogenic semiconductor amplifiers as interface between RSFQ circuits |
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| Authors: | S. Wuensch T. Ortlepp E. Crocoll H.-G. Meyer M. Siegel |
| Affiliation: | a Institute for Micro- and Nanoelectronic Systems, University Of Karlsruhe (TH), Hertzstrasse 16, 76187 Karlsruhe, Germany b Institute of Information Technology, Ilmenau University of Technology, P.O. Box 100565, 98684 Ilmenau, Germany c Institute of Photonic Technology, P.O. Box 100239, 07702 Jena, Germany |
| Abstract: | Rapid single flux quantum (RSFQ) circuits create high interest in cryogenic amplifiers as interface to commercial room temperature electronics. The requirements for the amplifiers are an extremely high bandwidth (SFQ pulses with  ), high voltage gain of about 104 (common RSFQ output voltage level of about  ), low power consumption (cryogenic environment at 4 K) and low noise. Hybrid amplifiers, based on commercial available p-HEMT transistors, can solve the problematic high-speed interface. In this paper, we present measurement results of a hybrid four stage coplanar amplifier in combination with a RSFQ Toggle Flip-Flop (RSFQ T-FF) and a Josephson array quantizer (JA-Q). |
| Keywords: | Cryogenic amplifier RSFQ Interface High-speed |
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