Significant aspects of minority-carrier injection in dynamic-threshold SOI MOSFET at low-temperature |
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Authors: | Yasuhisa Omura Takayuki Tochio |
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Affiliation: | ORDIST/Grad. School of Sci. and Eng., Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan |
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Abstract: | This paper demonstrates significant aspects of low-temperature minority-carrier injection in n-channel dynamic-threshold (DT) MOSFET having various silicon-on-insulator (SOI) layer thicknesses. Drain current vs. gate voltage and gate current vs. gate voltage characteristics are evaluated at temperatures ranging from 300 K to 30 K, and minority-carrier injection is characterized. Impacts of temperature, channel length, and silicon-on-insulator layer thickness on opposite drain current behavior are discussed by examining transconductance behavior. |
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Keywords: | MOSFET Silicon-on-insulator Bipolar operation Opposite drain current |
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