抗辐射加固与非加固工艺制备Si/SiO_2电离辐照的XPS深度剖析

采用氩离子刻蚀XPS分析方法对抗辐射加固与非加固工艺制备的Si/SiO_2系统进行电离辐照深度剖析。实验结果表明:在辐照剂量及偏置电场相同条件下辐照,非加固样品的界面区比加固样品界面区宽;同一工艺生长的SiO_2,衬底杂质浓度低的样品其界面区窄于衬底杂质浓度高的样品;辐照样品的Si过渡态密度最高位滞后于未辐照样品的;同时,加固样品Si过渡态及剩余氧的密度最高位出现慢于非加固样品的;衬底杂质浓度高的样品其Si过渡态及剩余氧的密度最高位的出现快于衬底杂质浓度低的样品的;此外含剩余氧的过渡层要比含Si过渡态的过渡层薄。最后根据实验结果,对Si/SiO_2三层模型进行了修正。

Depth - dissection of reinforced and unreinforced irradiated Si/SiO_2 by XPS

The Si/SiO2 system, prepared by reinforcement and non reinforcement craft against irradiation and irradiated with 60Co, was investigated with the depth dissection method of XPS. The experimental results indicate that 1) the interface of non reinforced samples was wider than that of reinforced ones ; 2) the interface of the samples with lower contentration of substrate impurity was narrower than that of the samples with higher concentration; 3) appearance of the highest density of transition state of silicon for irradiated samples had a lag behind non irradiated samples; 4) appeanance of the above highest density for reinforced samples was later than that for non reinforced samples; 5) appeaaranel of the above highest density for the samples with higher concentration of substrate impurity was earlier than that for the samples with lower concentration; and 6) the transition thickness of surplus oxygen was thiner than that of transition state of silicon. Finally, according to the experimental results a revised three layer model of Si/SiO2 was suggested.