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4J32镜头组件电化学方法消除杂散光的实验研究.doc
引用本文:姜伟,张云琨,张忠玉,任明文. 4J32镜头组件电化学方法消除杂散光的实验研究.doc[J]. 光学精密工程, 2008, 16(8): 1367-1370
作者姓名:姜伟  张云琨  张忠玉  任明文
作者单位:[1]中国科学院长春光学精密机械与物理研究所,吉林长春130031 [2]中国科学院研究生院,北京100049 [3]吉林大学,吉林长春130025
基金项目:中国科学院二期创新工程基金
摘    要:为消除光学系统镜头组件中杂散光以成像的影响,采用电化学方法对4J32合金进行处理,降低表面反射率,实现了消光处理。利用正交实验法研究了在重铬酸盐体系中主盐浓度、电压、电解液温度、时间等因素对镜头组件的消杂光性能的影响,并确定了最佳方法。结果表明,处理后零件尺寸改变极小,反射率降低较明显,所得到的4J32合金呈黑色、光亮美观,具有优良的附着力和消除杂散光能力。

关 键 词:4J32  电化学方法  杂散光
收稿时间:2007-08-21
修稿时间:2008-01-08

Study of Stray light Suppressing Measure by electrochemistry for 4J32 alloys
JIANG Wei,ZHANG Yun-Kun,ZHANG Zhong-yu,REN Ming-Wen. Study of Stray light Suppressing Measure by electrochemistry for 4J32 alloys[J]. Optics and Precision Engineering, 2008, 16(8): 1367-1370
Authors:JIANG Wei  ZHANG Yun-Kun  ZHANG Zhong-yu  REN Ming-Wen
Abstract:In order to realize stray light suppressing for 4J32 alloy in fine optical system,the stray light suppressing coatings were prepared on 4J32 alloy from a conventional anodisation-plating bath containing Ce and dual salt additive.The bath formula and rational process parameters were investigated using a orthogonal test.By testing the influences of concentrations of K2Cr2O7,MnSO4and(NH4)2SO4 in electrolyte solution,galvanic voltage,operating temperature and anodizing time on the anodizing films of 4J32 alloys,the optimal process conditions were gained as follows:20 g/L K2Cr2O7,20 g/L MnSO4,20 g/L(NH4)2SO4,15 g/L Ce and dual salt additive,temperature of 25 ℃,last time of 20 min and voltage of 30 V.A black stray light suppressing film was obtained with the process.The results of reflection testing,thick testing and shock testing show that 4J32 stray light suppressing coating has a low-reflecting ratio(1.5%),a few dimension change(<0.8 μm) and good adhesion to substrate,and it is suitable to suppress the stray light in fine optic system.
Keywords:4J32 alloy  electrochemistry method  stray light
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