Photoluminescence of localized exitons in coherently strained ZnS-ZnSe/GaAs(001) quantum wells |
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| Authors: | V V Tishchenko N V Bondar M S Brodyn A V Kovalenko |
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| Affiliation: | (1) Institute of Physics, Ukrainian Academy of Sciences, 252022 Kiev, Ukraine;(2) Dnepropetrovsk State University, 320625 Dnepropetrovsk, Ukraine |
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| Abstract: | The low-temperature photoluminescence (PL) of ZnS-ZnSe heterostructures grown in the form of single quantum wells (QW) by the non-conventional technology of photo-assisted vapor phase epitaxy has been investigated. It is shown that the inhomogeneity of the quantum wells can be explained in terms of a model based on disordering of the heterointerfaces. It is found that the mobility edge which separates the localized states from the delocalized states is 6 meV below the heavy-exciton ground state in the quantum wells with a nominal width L z=11 Å. |
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