Growth Studies on Quaternary AlInGaN Layers
for HEMT Application |
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| Authors: | Benjamin Reuters A Wille B Holländer E Sakalauskas N Ketteniss C Mauder R Goldhahn M Heuken H Kalisch A Vescan |
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| Affiliation: | 1.GaN Device Technology, RWTH Aachen University,Aachen,Germany;2.Forschungszentrum Jülich GmbH, PGI9-IT,Jülich,Germany;3.Jülich Aachen Research Alliance, JARA-FIT,Jülich,Germany;4.Institut für Physik, Technische Universit?t Ilmenau,Ilmenau,Germany;5.Institut für Experimentelle Physik (IEP),Magdeburg,Germany;6.AIXTRON SE,Herzogenrath,Germany |
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| Abstract: | Quaternary barrier layers for GaN-based high-electron-mobility transistors (HEMT) have recently been a focus of interest because
of the possible lattice-matched growth to GaN. This results in a reduction of strain-related defects, while having the option
of adjusting the bandgap separately. A further benefit of the quaternary approach is the possibility to achieve high polarization
and high carrier mobility simultaneously. This may improve the performance of such devices beyond what is possible with ternary
barrier layers. In this work, we report on growth and characterization of Al
x
In
y
Ga1−x−y
N barrier layers within the range of 16% to 56% Al, 2% to 45% In, and 20% to 82% Ga deposited on conventional GaN buffer layers
on sapphire. We present an effective way to change the composition of quaternary layers and discuss the influence of tensile
and compressive strain on structural and electrical properties. From high-resolution x-ray diffraction (HRXRD), Rutherford
backscattering spectroscopy (RBS), and wavelength-dispersive x-ray spectroscopy (WDX), we determined the compositions and
strain states of the AlInGaN layers. The bandgaps (E
g) were obtained by spectroscopic ellipsometry (SE). Hall and van der Pauw measurements on thin heterostructure layers yielded
high mobilities in excess of 1550 cm2/V s and 5350 cm2/V s at room temperature and 77 K, respectively. |
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