| A review of compact modeling for phase change memory |
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| 作者姓名： | Feilong Ding Baokang Peng Xi Li Lining Zhang Runsheng Wang Zhitang Song Ru Huang |
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| 作者单位： | School of Electronic and Computer Engineering,Peking University,Shenzhen 518055,China;Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Institute of Microelectronics,Peking University,Beijing 100871,China |
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| 基金项目： | supported in part by the National Natural Science Foundation of China(62074006,91964204);in part by the Major Scientific Instruments and Equipment Development(61927901);the Shenzhen Science and Technology Project(GXWD20201231165807007-20200827114656001);Strategic Priority Research Program of the Chinese Academy of Sciences(XDB44010200);Science and Technology Council of Shanghai(19JC1416801);the Shanghai Research and Innovation Functional Program(17DZ2260900);in part by the 111 Project(B18001)。 |
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| 摘 要： | Phase change memory(PCM)attracts wide attention for the memory-centric computing and neuromorphic comput-ing.For circuit and system designs,PCM compact models are mandatory and their status are reviewed in this work.Macro mod-els and physics-based models have been proposed in different stages of the PCM technology developments.Compact model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their interactions.Realizations of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit simulations.For the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed.
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| 关 键 词： | phase change memory compact model macro model physics-based model |
A review of compact modeling for phase change memory |
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| Feilong Ding,Baokang Peng,Xi Li,Lining Zhang,Runsheng Wang,Zhitang Song,Ru Huang.A review of compact modeling for phase change memory[J].Chinese Journal of Semiconductors,2022,43(2):51-64. |
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| Authors: | Feilong Ding Baokang Peng Xi Li Lining Zhang Runsheng Wang Zhitang Song Ru Huang |
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| Abstract: | Phase change memory (PCM) attracts wide attention for the memory-centric computing and neuromorphic comput-ing.For circuit and system designs,PCM compact models are mandatory and their status are reviewed in this work.Macro mod-els and physics-based models have been proposed in different stages of the PCM technology developments.Compact model-ing of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical,thermal and phase transition dynamics as well as their interactions.Realizations of the PCM operations including threshold switching,set and reset programming in these models are diverse,which also differs from the perspective of circuit simulations.For the purpose of efficient and reliable designs of the PCM technology,open issues and challenges of the compact modeling are also discussed. |
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| Keywords: | phase change memory compact model macro model physics-based model |
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