二硫化锡薄膜场效应晶体管的可见光探测特性

采用化学气相输运(CVT)法和微机械剥离技术制备了SnS₂薄膜,使用Au电极作为源、漏电极,n型重掺杂Si作为栅极,制备了基于SnS₂薄膜的背栅型场效应晶体管(FET),并研究了其电学特性和可见光探测特性。结果表明,制备的SnS₂薄膜具有良好的结晶度,SnS₂薄膜背栅型FET具备良好的栅压调控特性。器件对波长为405 nm的蓝紫光表现出明显的光响应,光响应度高达456.82 A·W^-1,外量子效率为1.40×10⁵%,比探测率为7.12×10¹²Jones,并且具有较快的光响应速度,上升和下降响应时间分别为1 ms和0.5 ms。器件的光探测性能受栅压调控,当栅压为40 V时,器件的光响应度可达730 A·W^-1。

Visible-Light Detection Characteristics of Field Effect Transistors Based on SnS2 Thin Films

SnS₂thin films were prepared by using chemical vapor transportation(CVT)method and micromechanical exfoliation technique.With Au electrodes as the source electrode and the drain electrode,and an n-type heavily doped Si as the gate electrode,the back-gate field effect transistors(FETs)based on SnS₂thin films were fabricated.The electrical characteristics and visible-light detection characteristics of devices were investigated.The results show that the prepared SnS₂thin film has good crystallinity.Back-gate FETs based on the SnS₂thin film show good gate voltage modulation characteristics.The device shows an obvious photoresponse to blue-violet light with a wavelength of 405 nm.The photoresponsivity is up to 456.82 A·W;,the external quantum efficiency is 1.40×10⁵%,and the specific detectivity is 7.12×10¹²Jones.The devices have a fast photoresponse speed,and the rising and falling response time are 1 ms and 0.5 ms,respectively.The optical detection performances of the devices can be modulated by gate voltages.When the gate voltage is 40 V,the photoresponsivity of the device can reach 730 A·W^-1.