|
|||||
|
|
Fabrication of GaN nanowalls and nanowires using surface charge lithography |
|
| Authors: | Veaceslav Popa Olesea Volciuc Martin Kuball |
| Affiliation: | a National Center for Materials Study and Testing, Technical University of Moldova, Stefan cel Mare av. 168, Chisinau MD-2004, Republic of Moldova b Institute of Applied Physics, Academy of Sciences of Moldova, Academy str. 5, Chisinau MD-2028, Republic of Moldova c H.H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS81TL, United Kingdom d Interface Analysis Centre, Oldbury House, 121 St. Michael's Hill, Bristol BS28BS, United Kingdom |
| Abstract: | We demonstrate the possibility for controlled nanostructuring of GaN by focused-ion-beam treatment with subsequent photoelectrochemical (PEC) etching. The proposed maskless approach based on direct writing of surface negative charge that shields the material against PEC etching allows fabrication of GaN nanowalls and nanowires with lateral dimensions as small as 100 nm. The results obtained show that the occurrence of undercut etching inherent to gallium nitride PEC etching depends on the depletion length in doped GaN material, it being nearly fully suppressed in the structures below a critical size of about 200 nm for the investigated GaN layer of doping concentration of 1.7 × 1017 cm− 3. |
| Keywords: | GaN Photoelectrochemical etching Nanowalls Nanowires |
| 本文献已被 ScienceDirect 等数据库收录！ | |