Lateral ion implant straggle and mask proximity effect |
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| Authors: | Hook TB Brown J Cottrell P Adler E Hoyniak D Johnson J Mann R |
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| Affiliation: | Semicond. R&D Center, IBM Microelectron., Essex Junction, VT, USA; |
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| Abstract: | Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon. |
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