Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy |
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Authors: | Yi-Shao Lai Kuo-Ming Chen Chin-Li Kao Chiu-Wen Lee Ying-Ta Chiu |
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Affiliation: | aStress-Reliability Laboratory, Advanced Semiconductor Engineering, Inc. 26 Chin 3rd Road, Nantze Export Processing Zone, 811 Nantze, Kaohsiung, Taiwan;bUnited Microelectronic Corporation, 3 Li-Hsin Road, II, Hsinchu Science Park, 300 Hsinchu, Taiwan |
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Abstract: | We examine electromigration fatigue reliability and morphological patterns of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite solder bumps in a flip–chip package assembly with Ti/Ni(V)/Cu UBM. The flip–chip test vehicle was subjected to test conditions of five combinations of applied electric currents and ambient temperatures, namely, 0.4 A/150 °C, 0.5 A/150 °C, 0.6 A/125 °C, 0.6 A/135 °C, and 0.6 A/150 °C. The electrothermal coupling analysis was employed to investigate the current crowding effect and maximum temperature in the solder bump in order to correlate with the experimental electromigration reliability using the Black’s equation as a reliability model. From available electromigration reliability models, we also present a comparison between fatigue lives of Sn–37Pb solder bumps with Ti/Ni(V)/Cu and those with Al/Ni(V)/Cu UBM under different current stressing conditions. |
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