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Structural and dielectric properties of epitaxial Ba0.6Sr0.4TiO3 thin films grown on Si substrates with thin SrO buffer layers |
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| Authors: | Hyun-Suk Kim Tae-Seon Hyun Ho-Gi Kim Tae-Soon Yun Jong-Chul Lee Il-Doo Kim |
| Affiliation: | (1) Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA;(2) Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Republic of Korea;(3) RFIC Research and Education Center, Kwangwoon University, 447-1 Wolgye-dong, Nowon-gu, Seoul, 139-703, Republic of Korea;(4) Optoelectronic Materials Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, 130-650, Republic of Korea |
| Abstract: | (100) epitaxial Ba0.6Sr0.4TiO3 (BST) thin films were grown on Si substrates using a 9 nm thick SrO buffer layer. The phase shifter fabricated on BST films grown on a SrO buffered Si substrate showed a larger figure of merit (FOM) of 24.7°/dB as a result of improving the phase tuning while retaining an appropriate insertion loss compared to that (15.3°/dB) for the BST/MgO structure. This work demonstrates that a thin SrO buffer layer plays an important role in the successful integration of BST-based microwave tunable devices onto Si wafers. |
| Keywords: | SrO BST Phase shifter Si integration Buffer layer |
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