多晶硅薄膜的结构与电学特性关系的研究

多晶硅薄膜的性质与膜的结构有密切关系。界面结构主要指晶粒尺寸、择优取向及其结构。多晶硅薄膜的结构主要由沉积条件、膜厚、掺杂条件和后来的退火温度和退火时间所决定。本文讨论了用常规低压化学汽相淀积（ＬＰＣＶＤ）方法制备的多晶硅薄膜的结构特性，初步获得了提高多晶硅压力传感器灵敏度及其温度稳定性的条件。

The Study of the Relationship of Structural and ElectricalCharacteristics on Polycrystalline Silicon Film

The properties of polycrystalline silicon film are in close relationship with thestructure of the film, which implies grain size. preferential growth orientation, etc. Thestructure of a polycrystalline silicon film dependes on the deposition condition, thicknessof the film, doping and annealing conditions. The structure of polycrystalline siliconfilm deposited by LPCVD are discussed. The conditions for improving the sensitivity ofpiezorisistive pressure sensors are presented.