Single-mode operation of mushroom structure surface emitting lasers |
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| Authors: | Yang YJ Dziura TG Wang SC Du G Wang S |
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| Affiliation: | Lockheed Palo Alto Res. Lab., CA; |
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| Abstract: | Mushroom structure vertical cavity surface emitting lasers with a 0.6-μm GaAs active layer sandwiched by two Al0.6Ga0.4 As-Al0.08Ga0.92As multilayers as top and bottom mirrors are discussed. The lasers exhibit a 15-mA pulses threshold current at 880 nm. Single longitudinal and single transverse mode operation was achieved on lasers with a 5-μm-diameter active region of current levels near 2×lth. The light output above threshold current was linearly polarized with a polarization ratio of 25:1 |
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