Charge transport mechanism and photoelectric characteristics of n +-Si-n-Si-Al2O3-Pd diode structures

Current-voltage characteristics at T=100 and 300 K, the temperature dependence of the forward current and photocurrent, the influence of a magnetic field on the photocurrent, and the influence of hydrogen on the photovoltage and dark current were investigated. It was found that the mechanism of the charge transport is controlled by double injection in the diffusion approximation at both T=100 K (I ∝ exp(qV/4kT)) and T=300 K (I ∝ V ^m , m=4–5.6). Diode structures enhance the photocurrent at a reverse bias. It was found that an increase in the photocurrent in the magnetic field H (ΔI _ph=αexpβH) can be explained by tunneling of the photocarriers during resonance impurity scattering in terms of their exponential energy distribution.