| Si离子注入对SIMOX SOI材料抗总剂量辐照性能的影响 |
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| 引用本文： | 杨慧,张恩霞,张正选. Si离子注入对SIMOX SOI材料抗总剂量辐照性能的影响[J]. 半导体学报, 2007, 28(3): 323-326 |
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| 作者姓名： | 杨慧 张恩霞 张正选 |
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| 作者单位： | 中国科学院上海微系统与信息技术研究所,信息功能材料国家重点实验室,上海,200050 |
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| 摘 要： | 为了提高SIMOX SOI材料抗总剂量辐照的能力,采用硅注入绝缘埋层后退火得到改性的SIMOX SOI材料.辐照前后,用pseudo-MOSFET方法测试样品的ID-VG特性曲线.结果表明,合适的硅离子注入工艺能有效提高材料抗总剂量辐照的能力.
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| 关 键 词： | SIMOX SOI Si离子注入 总剂量辐照效应 pseudo-MOS |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-11-03 |
Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials |
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| Yang Hui, Zhang Enxia, Zhang Zhengxuan. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Journal of Semiconductors, 2007, In Press. Yang H, Zhang E X, Zhang Z X. Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials[J]. Chin. J. Semicond., 2007, 28(3): 323.Export: BibTex EndNote |
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| Authors: | Yang Hui Zhang Enxia Zhang Zhengxuan |
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| Affiliation: | State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China |
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| Abstract: | To improve the total-dose radiation hardness,silicon-on-insulator (SOI) wafers fabricated by the separation-by-implanted-oxygen (SIMOX) method are modified by Si ion implantation into the buried oxide with a post anneal. The ID- VG characteristics can be tested with the pseudo-MOSFET method before and after radiation.The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials. |
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| Keywords: | SIMOX SOI Si ion implantation total-dose radiation effect pseudo-MOS |
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