|
|||||
|
|
| 一种基于RTD和HEMT的单片集成逻辑电路 | |
| 引用本文： | 戴扬,黄应龙,刘伟,马龙,杨富华,王良臣,曾一平,郑厚植.一种基于RTD和HEMT的单片集成逻辑电路[J].半导体学报,2007,28(3). |
| 作者姓名： | 戴扬 黄应龙 刘伟 马龙 杨富华 王良臣 曾一平 郑厚植 |
| 作者单位： | 1. 中国科学院半导体研究所,集成技术中心,北京,100083 2. 中国科学院半导体研究所,超晶格国家重点实验室,北京,100083 3. 中国科学院半导体研究所,材料科学中心,北京,100083 |
| 摘 要： | 介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上. |
| 关 键 词： | 单稳态-双稳态转换逻辑单元 共振隧穿二极管 高电子迁移率晶体管 InGaAs GaAs |
A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT |
|
| Dai Yang,Huang Yinglong,Liu Wei,Ma Long,Yang Fuhua,Wang Liangchen,Zeng Yiping,Zheng Houzhi.A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT[J].Chinese Journal of Semiconductors,2007,28(3). | |
| Authors: | Dai Yang Huang Yinglong Liu Wei Ma Long Yang Fuhua Wang Liangchen Zeng Yiping Zheng Houzhi |
| Abstract: | A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate.The RTD has a room temperature peak-to-valley ratio of 5.2∶1 with a peak current density of 22.5kA/cm2. The HEMT has a 1μm gate length with a - 1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz. |
| Keywords: | MOBILE RTD HEMT InGaAs GaAs |
| 本文献已被 万方数据 等数据库收录！ | |
| 点击此处可从《半导体学报》浏览原始摘要信息 | |
| 点击此处可从《半导体学报》下载全文 | |