| 等离子体对90nm工艺MOS器件的损伤 |
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| 引用本文： | 唐瑜,郝跃,孟志琴,马晓华. 等离子体对90nm工艺MOS器件的损伤[J]. 半导体学报, 2007, 28(1): 92-95 |
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| 作者姓名： | 唐瑜 郝跃 孟志琴 马晓华 |
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| 作者单位： | 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家高技术研究发展计划(863计划)，国家自然科学基金 |
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| 摘 要： | 研究了等离子体工艺对90nm铜大马士革工艺器件的损伤.对nMOSFET和pMOSFET分别进行了HCI和NBTI应力实验,实验结果证明天线比仍是反应等离子体损伤重要的标准且通孔天线结构器件的损伤最大,并从通孔刻蚀工艺过程中解释其原因.
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| 关 键 词： | 等离子体损伤 天线结构 通孔 铜大马士革工艺 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-09-07 |
Plasma-Induced Damage on 90nm-Technology MOSFETs |
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| Tang Yu, Hao Yue, Meng Zhiqin, Ma Xiaohua. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Journal of Semiconductors, 2007, In Press. Tang Y, Hao Y, Meng Z Q, Ma X H. Plasma-Induced Damage on 90nm-Technology MOSFETs[J]. Chin. J. Semicond., 2007, 28(1): 92.Export: BibTex EndNote |
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| Authors: | Tang Yu Hao Yue Meng Zhiqin Ma Xiaohua |
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| Affiliation: | Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China;Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’ an 710071,China |
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| Abstract: | Plasma-induced damage on 90nm Cu dual Damascene technology devices is investigated.Experiments on the hot carrier stress for nMOSFETs and NBTI stress for pMOSFETs are conducted.The antenna ratio is still a standard for detecting plasma-induced damage.The via structure shows more plasma damage than other metal structures.This is explained by the via first dual Damascene process. |
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| Keywords: | plasma-induced damage antenna structure via Cu dual Damascene technology |
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