| 蓝宝石衬底上水平生长ZnO纳米线及紫外敏感性能研究 |
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| 引用本文： | 邓宏,唐斌,程和,韦敏,陈金菊. 蓝宝石衬底上水平生长ZnO纳米线及紫外敏感性能研究[J]. 半导体学报, 2007, 28(1): 56-59 |
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| 作者姓名： | 邓宏 唐斌 程和 韦敏 陈金菊 |
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| 作者单位： | 1. 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054
2. 电子科技大学电子薄膜与集成器件国家重点实验室,成都,610054;西南石油大学理学院,成都,610500 |
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| 基金项目： | 陕西省重大科技创新基金，西安理工大学校科研和教改项目 |
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| 摘 要： | 在无催化剂条件下,采用化学气相沉积(CVD)方法在蓝宝石(110)衬底上制备了ZnO纳米线.X射线衍射(XRD)图谱上只有ZnO的(100)衍射峰和(110)衍射峰.扫描电子显微镜分析表明,ZnO纳米线在蓝宝石衬底上水平生长.在样品上蒸镀了金叉指电极,以256nm的紫外光作为光源,测试了样品的紫外光敏感性能,研究表明水平生长的ZnO纳米线对紫外光具有较快的响应,在5V偏压下,光电流与暗电流比为30;当波长为354nm时光响应度达到最大值为0.56A/W.
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| 关 键 词： | ZnO纳米线 紫外敏感 I-V特性 光响应度 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2006-09-04 |
Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates |
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| Deng Hong, Tang Bin, Cheng He, Wei Min, Chen Jinju. Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates[J]. Journal of Semiconductors, 2007, In Press. Deng H, Tang B, Cheng H, Wei M, Chen J J. Horizontal Growth and Ultraviolet Sensitivity Characteristics of ZnO Nanowires on Sapphire Substrates[J]. Chin. J. Semicond., 2007, 28(1): 56.Export: BibTex EndNote |
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| Authors: | Deng Hong Tang Bin Cheng He Wei Min Chen Jinju |
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| Affiliation: | National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China;National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China;School of Science,Southwest Petroleum University,Chengdu 610500,China;National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China;National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China;National Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienceand Technology of China,Chengdu 610054,China |
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| Abstract: | ZnO nanowires were synthesized without any kind of catalyst on a-plane sapphire substrate by chemical vapor deposition (CVD).Only the (100) and (101) diffraction peaks of ZnO were found on the XRD patterns of the samples.SEM images show that the ZnO nanowires are parallel to the sapphire substrate.Following the deposition of Au finger electrodes on the samples, the samples’ UV-sensitive performance was detected with a wavelength of illumination of 256nm. The results show that the ZnO nanowires respond very fast to UV-light, the ratio of photo current to dark current is about 30 at 5V, and the maximum photo-responsibility is of 0.56 A/W at 354nm. |
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| Keywords: | ZnO nanowires ultraviolet I-V characteristic photo-responsibility |
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