| DCXRD分析Ge/Si(001)多层纳米岛材料 |
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| 引用本文： | 时文华,薛春来,罗丽萍,王启明.DCXRD分析Ge/Si(001)多层纳米岛材料[J].半导体学报,2007,28(2). |
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| 作者姓名： | 时文华 薛春来 罗丽萍 王启明 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子学国家重点联合实验室,北京,100083 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 结合透射电镜与原子力显微镜实验,用双晶X射线衍射方法分析了Ge/Si多层纳米岛材料.衍射的卫星峰可以被分解为两个洛仑兹峰,它们分别源于材料的浸润层区和纳米岛区.利用透射电镜得到Si和SiGe层的厚度比,估算出浸润层区与岛区的Ge组分分别为0.51和0.67.这是一种简单估算Ge/Si多层纳米岛材料中Ge组分的方法.
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| 关 键 词： | Si Ge 纳米岛 岛 X射线 |
DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure |
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| Shi Wenhua,Xue Chunlai,Luo Liping,Wang Qiming.DCXRD Investigation of a Ge/Si(001) Island Multilayer Structure[J].Chinese Journal of Semiconductors,2007,28(2). |
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| Authors: | Shi Wenhua Xue Chunlai Luo Liping Wang Qiming |
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| Abstract: | A Ge/Si(001) island multilayer structure is investigated by double crystal X-ray diffraction, transmission electron microscopy, and atomic force microscopy. We fit the satellite peaks in the rocking curve by two Lorentz lineshapes,which originate from the wetting layer region and the island region. Then from the ratio of the thicknesses of the Si and Ge (GeSi) layers as determined by TEM,the Ge compositions of the wetting layer and islands are estimated to be about 0.51 and 0.67 , respectively , according to the positions of the fitted peaks. This proves to be a relatively simple way to investigate the Ge/Si (001) island multilayer structure. |
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| Keywords: | Si Ge nano-dot island X-ray |
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