Multiplication Model of EMCCD Based on Single Type of Carrier |
| |
| Authors: | ZHANG Can-lin CHEN Qian YIN Li-ju |
| |
| Affiliation: | (School of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, China) |
| |
| Abstract: | The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff’s ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model. |
| |
| Keywords: | optoelectronics and laser EMCCD electron multiplication gain on chip fringing field charge multiplication gate |
| 本文献已被 CNKI 维普 等数据库收录！ |
