Low temperature polycrystalline silicon thin film transistor withsilicon nitride ion stopper |
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Authors: | Kyung Ha Lee Young Min Jhon Hyuk Jin Cha Jin Jang |
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Affiliation: | Dept. of Phys., Kyung Hee Univ., Seoul; |
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Abstract: | The authors have fabricated a new low temperature polycrystalline silicon (poly-Si) thin film transistor (TFT) with silicon nitride (SiN x) ion-stopper and laser annealed poly-Si. The fabricated poly-Si TFT using SiNx as the ion-stopper as well as the gate insulator exhibited a field effect mobility of 110 cm2/Vs, subthreshold voltage of 5.5 V, subthreshold slope of 0.48 V/dec., and on/off current ratio of ~106. Low off-state leakage current of 2.4×10-2 A/μm at the drain voltage of 5 V and the gate voltage of -5 V was achieved |
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